DI018N65D1
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI018N65D1
MOSFET, DPAK, N, 650V, 18A, 0.19Ω, 175°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI018N65D1
DI018N65D1 Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 650 V
Drain Current 25°C ID 18.000 A
On-Resistance 1 RDSon1 0.1900 Ω
@ ID 9 A
@ VGS 10 V
Drain Current 100°C ID 12.500 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 142.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 54.000 A
Threshold Voltage VGSth min 3.0 V
VGSth max 5.0 V
Turn-On Delay Time tD(on) 42 ns
Rise Time tr 18 ns
Turn-Off Delay Time tD(off) 90 ns
Fall Time tf 24 ns
Total Gate Charge (10V) Qg (10V) 23.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 7 nC
Single pulse avalanche energy Eas 64.0 mJ
Input Capacitance Ciss 1200 pF
Output Capacitance Coss 50 pF
Reverse Transfer Capacitance Crss 2 pF
Reverse recovery charge Qrr 1 nC

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