DI018N65D1
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI018N65D1
MOSFET, DPAK, N, 650V, 18A, 0.19Ω, 175°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI018N65D1
DI018N65D1 Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 650 V
Drain current 25°C ID 18.000 A
On-resistance 1 RDSon1 0.1900 Ω
@ ID 9 A
@ VGS 10 V
Drain current 100°C ID 12.500 A
On-resistance 2 RDSon2
@ ID
@ VGS
Junction temperature Tjmin
Tjmax 175 °C
Power dissipation Ptot 142.000 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM 54.000 A
Threshold voltage VGSth min 3.0 V
VGSth max 5.0 V
Turn-on delay time tD(on) 42 ns
Rise time tr 18 ns
Turn-off delay time tD(off) 90 ns
Fall time tf 24 ns
Total gate charge (10V) Qg (10V) 23.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 7 nC
Single pulse avalanche energy Eas 64.0 mJ
Input capacitance Ciss 1200 pF
Output capacitance Coss 50 pF
Reverse transfer capacitance Crss 2 pF
Reverse recovery charge Qrr 1 nC

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