DI018C03PT
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI018C03PT
MOSFET, PowerQFN 3x3-Dual, N+P, 30V, -18A, 30mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI018C03PT
DI018C03PT Dual
Type SMD
Package PowerQFN 3x3-Dual
Qualification Industrial Grade
Config Dual
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N+P
Drain Source Voltage VDS 30 V
Drain Current 25°C ID -18.000 A
On-Resistance 1 RDSon1 0.0300
@ ID -10 A
@ VGS -10 V
Drain Current 100°C ID 17.000 A
On-Resistance 2 RDSon2 0.0130
@ ID 10.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 10.800 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM -80.000 A
Threshold Voltage VGSth min 1.0 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 13 ns
Rise Time tr 71 ns
Turn-Off Delay Time tD(off) 13 ns
Fall Time tf 21 ns
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V) 12.0 nC
Gate-Drain Charge Qgd 6 nC
Single pulse avalanche energy Eas 17.8 mJ
Input Capacitance Ciss 1122 pF
Output Capacitance Coss 140 pF
Reverse Transfer Capacitance Crss 105 pF
Reverse recovery charge Qrr 1 nC

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