DI017N06PQ-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI017N06PQ-AQ
MOSFET, PowerQFN 5x6, N, 60V, 17A, 33mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI017N06PQ-AQ
DI017N06PQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 60 V
Drain current 25°C ID 17.000 A
On-resistance 1 RDSon1 0.0330 Ω
@ ID 15 A
@ VGS 10 V
Drain current 100°C ID 10.000 A
On-resistance 2 RDSon2 0.0390 Ω
@ ID 10.000 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 21.000 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM 50.000 A
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 11 ns
Rise time tr 27 ns
Turn-off delay time tD(off) 10 ns
Fall time tf 2 ns
Total gate charge (10V) Qg (10V) 19.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas 3.7 mJ
Input capacitance Ciss 1260 pF
Output capacitance Coss 47 pF
Reverse transfer capacitance Crss 43 pF
Reverse recovery charge Qrr 5 nC

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