DI008N09SQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI008N09SQ
MOSFET, SO-8, N, 90V, 8A, 75mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI008N09SQ
DI008N09SQ Single
Type SMD
Package SO-8
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 90 V
Drain Current 25°C ID 8.000 A
On-Resistance 1 RDSon1 0.0750 Ω
@ ID 5 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.0900 Ω
@ ID 3.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 2.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 23.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 4 ns
Rise Time tr 26 ns
Turn-Off Delay Time tD(off) 16 ns
Fall Time tf 9 ns
Total Gate Charge (10V) Qg (10V) 12.0 nC
Total Gate Charge (4.5V) Qg (4.5V) 12.0 nC
Gate-Drain Charge Qgd 2 nC
Single pulse avalanche energy Eas 3.2 mJ
Input Capacitance Ciss 1100 pF
Output Capacitance Coss 55 pF
Reverse Transfer Capacitance Crss 40 pF
Reverse recovery charge Qrr 0 nC

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