DI006H03SQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI006H03SQ H-Bridge
MOSFET, SO-8, N+P, 30V, 6A, 25mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI006H03SQ
DI006H03SQ H Bridge
Type SMD
Package SO-8
Qualification Industrial Grade
Config H Bridge
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N+P
Drain Source Voltage VDS 30 V
Drain Current 25°C ID 6.000 A
On-Resistance 1 RDSon1 0.0250 Ω
@ ID 5 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.0400 Ω
@ ID 4.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 1.500 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 60.000 A
Threshold Voltage VGSth min 1.0 V
VGSth max 2.0 V
Turn-On Delay Time tD(on) 11 ns
Rise Time tr 15 ns
Turn-Off Delay Time tD(off) 18 ns
Fall Time tf 9 ns
Total Gate Charge (10V) Qg (10V) 11.7 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 2 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 590 pF
Output Capacitance Coss 122 pF
Reverse Transfer Capacitance Crss 58 pF
Reverse recovery charge Qrr 12 nC

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