DI005P04PW
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Request sample

Stock

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI005P04PW
MOSFET, PowerQFN 2x2, P, -40V, -5.4A, 40mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

Downloads & Links

Distributor Availability

Technical data

Article number DI005P04PW
DI005P04PW Single
Type SMD
Package PowerQFN 2x2
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol P
Drain Source Voltage VDS -40 V
Drain Current 25°C ID -5.400 A
On-Resistance 1 RDSon1 0.0400 Ω
@ ID -4 A
@ VGS -10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.0550 Ω
@ ID -2.000 A
@ VGS -4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 2.000 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM -40.000 A
Threshold Voltage VGSth min -1 V
VGSth max -2.5 V
Turn-On Delay Time tD(on) 9 ns
Rise Time tr 27 ns
Turn-Off Delay Time tD(off) 14 ns
Fall Time tf 3 ns
Total Gate Charge (10V) Qg (10V) 19.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 3 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 1078 pF
Output Capacitance Coss 80 pF
Reverse Transfer Capacitance Crss 42 pF
Reverse recovery charge Qrr 5 nC

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample