DI005P04PW-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI005P04PW-Q
MOSFET, PowerQFN 2x2, P, -40V, -5.4A, 40mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI005P04PW-Q
DI005P04PW-Q Single
Type SMD
Package PowerQFN 2x2
Qualification AEC-Q compliant
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol P
Drain Source Voltage VDS -40 V
Drain Current 25°C ID -5.400 A
On-Resistance 1 RDSon1 0.0400 Ω
@ ID -4 A
@ VGS -10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.0550 Ω
@ ID -2.000 A
@ VGS -4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 2.000 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM -40.000 A
Threshold Voltage VGSth min -1 V
VGSth max -2.5 V
Turn-On Delay Time tD(on) 9 ns
Rise Time tr 27 ns
Turn-Off Delay Time tD(off) 14 ns
Fall Time tf 3 ns
Total Gate Charge (10V) Qg (10V) 19.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 3 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 1078 pF
Output Capacitance Coss 80 pF
Reverse Transfer Capacitance Crss 42 pF
Reverse recovery charge Qrr 5 nC

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