DI002N10PWK
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI002N10PWK
MOSFET, PowerQFN 2x2, N, 100V, 2A, 0.25Ω, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI002N10PWK
DI002N10PWK Single Protected
Type SMD
Package PowerQFN 2x2
Qualification Industrial Grade
Config Single Protected
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected Yes
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 2.000 A
On-Resistance 1 RDSon1 0.2500 Ω
@ ID 2 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.2600 Ω
@ ID 1.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 2.000 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 8.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 10 ns
Rise Time tr 4 ns
Turn-Off Delay Time tD(off) 8 ns
Fall Time tf 13 ns
Total Gate Charge (10V) Qg (10V) 8.4 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 1 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 454 pF
Output Capacitance Coss 17 pF
Reverse Transfer Capacitance Crss 13 pF
Reverse recovery charge Qrr 15 nC

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