2N7000
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description 2N7000
MOSFET, TO-92, N, 60V, 0.2A, 5Ω, 150°C
Minimum order quantity 4.000
Stock 40.000
Customs Tariff Number 85412100
Origin CN
RoHS / REACH Yes

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Technical data

Article number 2N7000
2N7000 Single
Type Wire-lead
Package TO-92
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 60 V
Drain Current 25°C ID 0.200 A
On-Resistance 1 RDSon1 5.0 Ω
@ ID 0.5 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 6.0000 Ω
@ ID 0.075 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 0.350 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 0.500 A
Threshold Voltage VGSth min 0.8 V
VGSth max 3.0 V
Turn-On Delay Time tD(on) 10 ns
Rise Time tr 10 ns
Turn-Off Delay Time tD(off) 10 ns
Fall Time tf 10 ns
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss 60 pF
Output Capacitance Coss 25 pF
Reverse Transfer Capacitance Crss 5 pF
Reverse recovery charge Qrr

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