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SI02C120SMA - Silicon Carbide Schottky Diode Optimized for High-Side SiC MOSFET Bootstrapping
The SI02C120SMA by Diotec Semiconductor is a 2 A / 1200 V Silicon Carbide Schottky Diode encapsulated in the compact DO-214AA (SMA) package. It features a high breakdown voltage of 1200 V combined with an extremely low reverse recovery charge and intrinsic junction capacitance hence improved its reliability in highly demanding application. Hence, this would pose SI02C120SMA as an optimum Bootstrap Diode in driving high-side (HS) configuration SiC-MOSFET.
Driving a HS SiC-MOSFET poises a significant challenge due to its floating Source Voltage node, VS, which reaches several hundred volts in a typical application. Hence, to effectively turn on the SiC-MOSFET, the gate voltage, Vg, must be biased sufficiently above the Vs. One of the most cost-effective methods to achieve this is through bootstrapping. However, conventional bootstrap circuits may face limitations especially in duty cycle and operating frequency, primarily due to the fast repetitive charging time of the bootstrap capacitor. These limitations could be substantially mitigated by our newly released SI02C120SMA. Its ability to withstand higher-intensity and repetitive peak forward currents could eliminate the need for a bootstrap resistor, thereby speeding up the charging and discharging process. Furthermore, its favourable smaller junction capacitance helps suppress any possible EMI-induced ringing and reduce the possibility of false Undervoltage Lockout (UVLO) triggering by the gate driver. The diode’s robust performance under demanding environment surpasses even that of the soft recovery ultra-fast silicon diode, making it a superior replacement in the selection of bootstrapping diode.
Features
- High reverse breakdown voltage
- Almost zero switching losses
- Low reverse leakage current
- High efficiency high frequency switching
- Compact SMD package
Applications
- Auxiliary Power Supply
- Solar inverters
- Telecom power supplies
- Power factor correction
Specifications
- 2 A average forward current at 160°C (IFAV)
- 1200 V repetitive reverse voltage (VRRM)
- Typical forward voltage 1.40 V V at 2 A and 25°C (VF)
- Typical reverse leakage 2 µA at 1200 V and 175°C (IR)
- Total capacitive charge 16 nC at 800 V, 2 A, 200 A/µs [QC)
- DO-214AC (SMA) case outline