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- SB350 Schottky, DO-201, 50V, 3A, 150°C
- DI350N10D2 MOSFET, D2PAK, N, 100V, 350A, 2mΩ, 175°C
- KBPC3502FP Bridge, 1-ph, KBPC, 200V, 35A, 150°C
- KBPC3502WP Bridge, 1-ph, KBPC, 200V, 35A, 150°C
- 1N5350B Zener, DO-201, 13V, 5W, ±5%
- DI350N10D2-AQ MOSFET, D2PAK, N, 100V, 350A, 2mΩ, 175°C, AEC-Q101
- 1.5SMC350 TVS, SMC, 284V, 1500W, Unidir
- P6SMB350CA TVS, SMB, 150°C, 600W, 300V, Bidir
- F5K120 Diode, Fast, DO-201, 120V, 5A, 350ns, 175°C
- DBI25-08A Bridge, 3-ph, DBI, 800V, 25A, 175°C
- F11K120 Diode, Fast, D5.4x7.5, 120V, 11A, 350ns, 150°C
- LDI92-05EN VR, SOT-23-5, 7V, 4.95V, 5.05V, 125°C, 0.001mA
- LDI92-1.2EN VR, SOT-23-5, 7V, 1.188V, 1.212V, 125°C, 0.001mA
- LDI92-3.3EN VR, SOT-23-5, 7V, 3.27V, 3.33V, 125°C, 0.001mA
- DIW030F135 IGBT, TO-247-3L, N-Fast, 1350 V, 30 A
- DIW040F135 IGBT, TO-247-3L, N-Fast, 1350 V, 40 A
- LDI559-05EN VR, SOT-23-5, 18V, 4.9V, 5.1V, 125°C, 0.005mA
- LDI8119-05EN VR, SOT-23-5, 18V, 4.9V, 5.1V, 125°C, 0.004mA
- MMFTP5618 MOSFET, SOT-23, P, -60V, -1.25A, 0.17Ω, 150°C
- MMFTP5618-AQ MOSFET, SOT-23, P, -60V, -1.25A, 0.17Ω, 150°C, AEC-Q101
- SI-A3000 HV Diode, D55x23, 8000V, 2.5A
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Siliziumkarbid-Schottky Roadmap
sich durch ein hohe Sperrspannung (650 V ... 1200 V) sowie eine extrem niedrige "Sperrverzugszeit … sich durch ein hohe Sperrspannung (650 V ... 1200 V) sowie eine extrem niedrige "Sperrverzugszeit … hohen Frequenzen geschaltet … Application Notes 07.06.2023 Siliziumkarbid-Schottky Roadmap Bauteile
Flyer: Diskrete Lösungen für das Laden von E-Autos
and rectifiers by Diotec. Application Notes 21.10.2020 Flyer: Diskrete Lösungen für das Laden von E- … BYG10M-AQ index.php > en > product > BYG10M-AQ BYG23T-AQ index.php > en > product > BYG23T-AQ DBI25- … BYG10M-AQ, Show details for article number BYG23T-AQ, Show details for article number
Siliziumkarbid-Schottky Roadmap
sich durch ein hohe Sperrspannung (650 V ... 1200 V) sowie eine extrem niedrige "Sperrverzugszeit … sich durch ein hohe Sperrspannung (650 V ... 1200 V) sowie eine extrem niedrige "Sperrverzugszeit … hohen Frequenzen geschaltet … Application Notes 07.06.2023 Siliziumkarbid-Schottky Roadmap Bauteile
SiC MOSFET Family
Videos Videos about our products and our company 26.02.2024 SiC MOSFET Family Find out about Diotec … are low switching losses, high voltage levels (1200 V), maximum 53 mΩ to 23 mΩ on-state resistance ( … , high voltage levels (1200 V), maximum 53 mΩ to 23 mΩ on-state resistance (RDSon), low gate
SiC MOSFET Familie
Videos Videos about our products and our company 26.02.2024 SiC MOSFET Familie Informieren Sie sich über die … niedrige Schaltverluste, hohe Spannungspegel (1200 V), maximal 53 mΩ bis 23 mΩ Durchlasswiderstand … hohe Spannungspegel (1200 V), maximal 53 mΩ bis 23 mΩ Durchlasswiderstand (RDSon),
Silicon Carbide Schottky Roadmap
diodes feature a high reverse voltage (650 V ... 1200 V) combined with an extremely low "reverse … diodes feature a high reverse voltage (650 V ... 1200 V) combined with an extremely low "reverse … high frequencies. Typical … Application Notes 07.06.2023 Silicon Carbide Schottky Roadmap Parts for
Flyer: EV-Charging Solutions
and rectifiers by Diotec. Application Notes 21.10.2020 Flyer: EV-Charging Solutions All kind of EV … BYG10M-AQ index.php > en > product > BYG10M-AQ BYG23T index.php > en > product > BYG23T DBI25-16A … BYG10M-AQ, Show details for article number BYG23T, Show details for article number DBI25-16A, Show
SiC MOSFET系列
Videos Videos about our products and our company 26.02.2024 SiC MOSFET系列 了解德欧泰克的SiC MOSFET系列， … ，工业和商业领域的其他电源应用。 这些碳化硅MOSFET的规格是低开关损耗，高电压电平(1200 V)，最大53 mΩ至23 mΩ导通电阻(RDSon)，低栅极电荷(从-8 V到22 … 。 这些碳化硅MOSFET的规格是低开关损耗，高电压电平(1200 V)，最大53 mΩ至23 mΩ导通电阻(RDSon)，低栅极电荷(从-8 V到22 V连续栅源电压(VGSS)）等等。 … -AQ en >
Silicon Carbide Schottky Roadmap
diodes feature a high reverse voltage (650 V ... 1200 V) combined with an extremely low "reverse … diodes feature a high reverse voltage (650 V ... 1200 V) combined with an extremely low "reverse … high frequencies. Typical … Application Notes 07.06.2023 Silicon Carbide Schottky Roadmap Parts for
SiC MOSFET Family
Videos Videos about our products and our company 26.02.2024 SiC MOSFET Family Find out about Diotec … are low switching losses, high voltage levels (1200 V), maximum 53 mΩ to 23 mΩ on-state resistance ( … , high voltage levels (1200 V), maximum 53 mΩ to 23 mΩ on-state resistance (RDSon), low gate