MMFTP3334K
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTP3334K Gate Protected
MOSFET, SOT-23, P, -30V, -4A, 71mΩ, 150°C
Minimum order quantity 3.000
Stock 9.000
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Distributor Availability

Technical data

Article number MMFTP3334K
MMFTP3334K Single Protected
Type SMD
Package SOT-23
Qualification Industrial Grade
Config Single Protected
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected Yes
Polarity pol P
Drain source voltage VDS -30 V
Drain current 25°C ID -4.000 A
On-resistance 1 RDSon1 0.0710
@ ID -3 A
@ VGS -10 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.1050
@ ID -2.000 A
@ VGS -4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 1.000 W
@ TLoc
Location
Avalanche No
Peak drain current IDM -16.000 A
@ tp
Threshold voltage VGSth min -0.8 V
VGSth max -2.0 V
Turn-on delay time tD(on) 13 ns
Rise time tr
Turn-off delay time tD(off) 22 ns
Fall time tf
Total gate charge (10V) Qg (10V) 5.9 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 1 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 280 pF
Output capacitance Coss 55 pF
Reverse transfer capacitance Crss 40 pF
Reverse recovery charge Qrr
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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