MMFTP3160-AQ
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTP3160-AQ
MOSFET, SOT-23, P, -30V, -2.6A, 90mΩ, 150°C, AEC-Q101
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Downloads & Links

Distributor Availability

Technical data

Article number MMFTP3160-AQ
MMFTP3160-AQ Single
Type SMD
Package SOT-23
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -30 V
Drain current 25°C ID -2.6 A
On-resistance 1 RDSon1 0.09 Ω
@ ID -2.6 A
@ VGS -10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.16 Ω
@ ID -2 A
@ VGS -4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1.4 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM -20 A
@ tp null µs
Threshold voltage VGSth min -1 V
VGSth max -2 V
Turn-on delay time tD(on) 8 ns
Rise time tr 13 ns
Turn-off delay time tD(off) 10 ns
Fall time tf 3 ns
Total gate charge (10V) Qg (10V) 8.3 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 2 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 40 pF
Output capacitance Coss 47 pF
Reverse transfer capacitance Crss 410 pF
Reverse recovery charge Qrr 5 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking VK
Thermal resistance junction RTH 125 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 24 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 3 mA/V
Intrinsic gate resistance RGi 5.8 Ω

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample