MMFTN620KDW-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN620KDW-AQ
MOSFET, SOT-363, N+N, 60V, 0.35A, 2Ω, 150°C, AEC-Q101
Minimum order quantity 3.000
Stock 234.000
Customs Tariff Number 85412100
Origin CN
RoHS / REACH Yes

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Technical data

Article number MMFTN620KDW-AQ
MMFTN620KDW-AQ Dual Protected
Type SMD
Package SOT-363
Qualification AEC-Q101
Config Dual Protected
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected Yes
Polarity pol N+N
Drain Source Voltage VDS 60 V
Drain Current 25°C ID 0.350 A
On-Resistance 1 RDSon1 2 Ω
@ ID 0.100 A
@ VGS 5 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 2.5000 Ω
@ ID 0.050 A
@ VGS 2.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 0.200 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 0.500 A
Threshold Voltage VGSth min 0.5 V
VGSth max 1.0 V
Turn-On Delay Time tD(on) 13 ns
Rise Time tr 13 ns
Turn-Off Delay Time tD(off) 8 ns
Fall Time tf 5 ns
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V) 0.8 nC
Gate-Drain Charge Qgd 0 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 49 pF
Output Capacitance Coss 10 pF
Reverse Transfer Capacitance Crss 8 pF
Reverse recovery charge Qrr 4 nC

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