MMFTN340K-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN340K-Q
MOSFET, SOT-23, N, 100V, 1A, 0.32Ω, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTN340K-Q
MMFTN340K-Q Single Protected
Type SMD
Package SOT-23
Qualification AEC-Q compliant
Config Single Protected
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 1.000 A
On-resistance 1 RDSon1 0.3200 Ω
@ ID 1 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.3400 Ω
@ ID 1.000 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 1.000 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 4.000 A
@ tp
Threshold voltage VGSth min 1.0 V
VGSth max 2.5 V
Turn-on delay time tD(on) 10 ns
Rise time tr 4 ns
Turn-off delay time tD(off) 8 ns
Fall time tf 13 ns
Total gate charge (10V) Qg (10V) 8.4 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 1 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 454 pF
Output capacitance Coss 17 pF
Reverse transfer capacitance Crss 13 pF
Reverse recovery charge Qrr 15 nC
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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