MMFTN2362-Q
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Request sample

Stock

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN2362-Q
MOSFET, SOT-23, N, 60V, 3A, 80mΩ, 150°C, AEC-Q101
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

Downloads & Links

Distributor Availability

Technical data

Article number MMFTN2362-Q
MMFTN2362-Q Single
Type SMD
Package SOT-23
Qualification AEC-Q compliant
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 60 V
Drain Current 25°C ID 3.000 A
On-Resistance 1 RDSon1 0.0800 Ω
@ ID 3.000 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.1000 Ω
@ ID 2.400 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 1.250 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 12.000 A
Threshold Voltage VGSth min 1.0 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 7 ns
Rise Time tr 2 ns
Turn-Off Delay Time tD(off) 6 ns
Fall Time tf 5 ns
Total Gate Charge (10V) Qg (10V) 8.6 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 1 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 445 pF
Output Capacitance Coss 22 pF
Reverse Transfer Capacitance Crss 18 pF
Reverse recovery charge Qrr 4 nC

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample