MMFTN210A-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN210A-AQ
MOSFET, SOT-23, N, 100V, 2A, 0.32Ω, 150°C, AEC-Q101
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTN210A-AQ
MMFTN210A-AQ Single
Type SMD
Package SOT-23
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 2.000 A
On-resistance 1 RDSon1 0.3200 Ω
@ ID 1 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.4500 Ω
@ ID 1.000 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 1.560 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 7.200 A
Threshold voltage VGSth min 0.8 V
VGSth max 1.6 V
Turn-on delay time tD(on) 5 ns
Rise time tr 3 ns
Turn-off delay time tD(off) 16 ns
Fall time tf 3 ns
Total gate charge (10V) Qg (10V) 3.5 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 1 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 362 pF
Output capacitance Coss 11 pF
Reverse transfer capacitance Crss 7 pF
Reverse recovery charge Qrr 24 nC

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