MMFTN123
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Application Reference Diagrams
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN123
MOSFET, SOT-23, N, 100V, 0.17A, 6Ω, 150°C
Minimum order quantity 3.000
Stock 630.000
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Downloads & Links

Distributor Availability

Technical data

Article number MMFTN123
MMFTN123 Single
Type SMD
Package SOT-23
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 0.170 A
On-resistance 1 RDSon1 6.0 Ω
@ ID 0.17 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 10.0000 Ω
@ ID 0.170 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 0.360 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 0.680 A
Threshold voltage VGSth min 0.8 V
VGSth max 2.0 V
Turn-on delay time tD(on) 3 ns
Rise time tr 18 ns
Turn-off delay time tD(off) 31 ns
Fall time tf 15 ns
Total gate charge (10V) Qg (10V)
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd
Single pulse avalanche energy Eas
Input capacitance Ciss 73 pF
Output capacitance Coss 7 pF
Reverse transfer capacitance Crss 3 pF
Reverse recovery charge Qrr

News and Updates

  • Filter:

Request sample