MMFT1020DW
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFT1020DW
MOSFET, SOT-363, N+P,100V, 0.270A, 1.6Ω, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFT1020DW
MMFT1020DW Dual
Type SMD
Package SOT-363
Qualification Industrial Grade
Config Dual
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N+P
Drain source voltage VDS 100 V
Drain current 25°C ID 0.270 A
On-resistance 1 RDSon1 1.60000 Ω
@ ID 0.200 A
@ VGS 10 V
Drain current 100°C ID 0.200 A
On-resistance 2 RDSon2 1.60000 Ω
@ ID -0.200 A
@ VGS -10 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 0.277 W
@ TLoc 25 °C
Location
Avalanche No
Peak drain current IDM 1.000 A
Threshold voltage VGSth min 1.0 V
VGSth max 3.0 V
Turn-on delay time tD(on) 12 ns
Rise time tr 5 ns
Turn-off delay time tD(off) 18 ns
Fall time tf 15 ns
Total gate charge (10V) Qg (10V) 3.3 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 0.7 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 79 pF
Output capacitance Coss 18 pF
Reverse transfer capacitance Crss 13 pF
Reverse recovery charge Qrr

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