MMBT7002KDW
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMBT7002KDW Gate protected
MOSFET, SOT-363, N+N, 60V, 0.3A, 3Ω, 150°C
Minimum order quantity 3.000
Stock 6.000
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Distributor Availability

Technical data

Article number MMBT7002KDW
MMBT7002KDW Dual Protected
Type SMD
Package SOT-363
Qualification Industrial Grade
Config Dual Protected
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected Yes
Polarity pol N+N
Drain source voltage VDS 60 V
Drain current 25°C ID 0.300 A
On-resistance 1 RDSon1 3
@ ID 0.500 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 4.0000
@ ID 0.050 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 0.350 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 1.200 A
@ tp
Threshold voltage VGSth min 1.1 V
VGSth max 1.8 V
Turn-on delay time tD(on) 3 ns
Rise time tr 3 ns
Turn-off delay time tD(off) 13 ns
Fall time tf 8 ns
Total gate charge (10V) Qg (10V)
Total gate charge (4.5V) Qg (4.5V) 0.4 nC
Gate-drain charge Qgd 0 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 21 pF
Output capacitance Coss 12 pF
Reverse transfer capacitance Crss 0 pF
Reverse recovery charge Qrr 29 nC
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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