MMBT7002DW
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMBT7002DW
MOSFET, SOT-363, N+N, 60V, 0.115A, 7.5Ω, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
Origin CN
RoHS / REACH Yes

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Technical data

Article number MMBT7002DW
MMBT7002DW Dual
Type SMD
Package SOT-363
Qualification Industrial Grade
Config Dual
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N+N
Drain Source Voltage VDS 60 V
Drain Current 25°C ID 0.115 A
On-Resistance 1 RDSon1 7.5
@ ID 0.5 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 7.5000
@ ID 0.050 A
@ VGS 5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 0.200 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 0.800 A
Threshold Voltage VGSth min 1.0 V
VGSth max 2.5 V
Turn-On Delay Time tD(on)
Rise Time tr 20 ns
Turn-Off Delay Time tD(off)
Fall Time tf 20 ns
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss 50 pF
Output Capacitance Coss 25 pF
Reverse Transfer Capacitance Crss 5 pF
Reverse recovery charge Qrr 0 nC

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