DIW120SIC059-AQ
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIW120SIC059-AQ 1200V SiC MOSFET
SiC MOSFET, TO-247-3L, N, 65A, 1200V, 53mΩ, 175°C, AEC-Q101
Minimum order quantity 450
Stock 90
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DIW120SIC059-AQ
DIW120SIC059-AQ Single
Type Wire-lead
Package TO-247-3L
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 65.000 A
Drain Current 100°C ID 45.000 A
Drain Source Voltage VDS 1200 V
On-Resistance 1 RDSon1 0.0530 Ω
@ ID 33 A
@ VGS 18 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 278.000 W
@ TLoc
Location
Peak Drain Current IDM 100.000 A
Threshold Voltage VGSth min 1.9 V
VGSth max 4.0 V
Rise Time tr 58 ns
Fall Time tf 15 ns
Total Switching Energy Etotal 2.16 mJ
ESD protection ESD protected No
On-Resistance 2 RDSon2 0.0650 Ω
@ ID 33.000 A
@ VGS 18 V
Turn-On Delay Time tD(on) 17 ns
Turn-Off Delay Time tD(off) 26 ns
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V)
Gate-Drain Charge Qgd 20 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 2070 pF
Output Capacitance Coss 112 pF
Reverse Transfer Capacitance Crss 11 pF
Reverse recovery charge Qrr 109 nC
Avalanche Avalanche No

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