DIW085N06-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIW085N06-Q
MOSFET, TO-247-3L, N, 65V, 85A, 9.1mΩ, 150°C
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS
REACH
Lead free No
Halogen free No

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Technical data

Article number DIW085N06-Q
DIW085N06-Q Single
Type Wire-lead
Package TO-247-3L
Qualification AEC-Q compliant
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 65 V
Drain current 25°C ID 85.000 A
On-resistance 1 RDSon1 0.0091 Ω
@ ID 40 A
@ VGS 10 V
Drain current 100°C ID 60.000 A
On-resistance 2 RDSon2
@ ID
@ VGS
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 240.000 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM 340.000 A
@ tp
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-on delay time tD(on) 22 ns
Rise time tr 61 ns
Turn-off delay time tD(off) 67 ns
Fall time tf 28 ns
Total gate charge (10V) Qg (10V) 80.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 31 nC
Single pulse avalanche energy Eas 450.0 mJ
Input capacitance Ciss 3704 pF
Output capacitance Coss 231 pF
Reverse transfer capacitance Crss 219 pF
Reverse recovery charge Qrr 44 nC
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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