DIW040S120
IGBT (Insulated Gate Bipolar Transistors)

Product information

Product family IGBT (Insulated Gate Bipolar Transistors)
Power Switch for Inverters
Article description DIW040S120
IGBT, TO-247-3L, N-reSonant, 1200 V, 40 A
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Distributor Availability

Technical data

Article number DIW040S120
DIW040S120 Single
Type Wire-lead
Package TO-247-3L
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
Collector Emitter Voltage S VCES 1200 V
DC Collector Current 100°C IC100 40 A
Peak Collector Current ICM 120 A
Polarity pol N (reSonant)
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 395.000 W
@ TLoc 25 °C
Location
Gate Emitter Threshold Voltage VGEthmin 5.0 V
VGEth 6.0 V
VGEthmax 7.0 V
Collector Emitter Saturation Voltage VCEsat100 2.10 V
@ IC100 40 A
@ VGE 15 V
Rise Time tr 69 ns
Fall Time tf 251 ns

Application Reference Diagrams

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