DIW038N65K
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIW038N65K Gate Protected
MOSFET, TO-247-3L, N, 650V, 38A, 65mΩ, 150°C
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIW038N65K
DIW038N65K Single Protected
Type Wire-lead
Package TO-247-3L
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
ESD protection ESD protected Yes
Polarity pol N
Drain Source Voltage VDS 650 V
Drain Current 25°C ID 38.000 A
On-Resistance 1 RDSon1 0.0650 Ω
@ ID 20 A
@ VGS 10 V
Drain Current 100°C ID 24.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 192.000 W
@ TLoc
Location
Avalanche Yes
Peak Drain Current IDM 160.000 A
Threshold Voltage VGSth min 2.5 V
VGSth max 4.5 V
Turn-On Delay Time tD(on) 74 ns
Rise Time tr 48 ns
Turn-Off Delay Time tD(off) 65 ns
Fall Time tf 13 ns
Total Gate Charge (10V) Qg (10V) 101.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 35 nC
Single pulse avalanche energy Eas 1567.0 mJ
Input Capacitance Ciss 4884 pF
Output Capacitance Coss 103 pF
Reverse Transfer Capacitance Crss 4 pF
Reverse recovery charge Qrr 9 nC

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