DIJ128N10
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIJ128N10
MOSFET, ITO-220AB, N, 100V, 128A, 4.5mΩ, 175°C
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIJ128N10
DIJ128N10 Single
Type Wire-lead
Package ITO-220AB
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 125.000 A
On-Resistance 1 RDSon1 0.0000 Ω
@ ID 0.000 A
@ VGS 0 V
Drain Current 100°C ID 88.000 A
On-Resistance 2 RDSon2 0.00500 Ω
@ ID 30.000 A
@ VGS 10 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 150.000 W
@ TLoc 25 °C
Location
Avalanche Yes
Peak Drain Current IDM 500.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 24 ns
Rise Time tr 55 ns
Turn-Off Delay Time tD(off) 18 ns
Fall Time tf 6 ns
Total Gate Charge (10V) Qg (10V) 49.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 15 nC
Single pulse avalanche energy Eas 306.0 mJ
Input Capacitance Ciss 2796 pF
Output Capacitance Coss 1234 pF
Reverse Transfer Capacitance Crss 28 pF
Reverse recovery charge Qrr 94.0 nC

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