DIH005P03-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIH005P03-AQ
MOSFET, SOT-23, P, -30V, -5.2A , 0.08Ω, 150°C, AEC-Q101
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Distributor Availability

Technical data

Article number DIH005P03-AQ
DIH005P03-AQ Single
Type SMD
Package SOT-223
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -30 V
Drain current 25°C ID -5.200 A
On-resistance 1 RDSon1 0.0800
@ ID -1.500 A
@ VGS -10 V
Drain current 100°C ID
On-resistance 2 RDSon2
@ ID
@ VGS
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 8.900 W
@ TLoc
Location
Avalanche No
Peak drain current IDM -26.000 A
@ tp
Threshold voltage VGSth min
VGSth max 2.5 V
Turn-on delay time tD(on)
Rise time tr
Turn-off delay time tD(off)
Fall time tf
Total gate charge (10V) Qg (10V)
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd
Single pulse avalanche energy Eas
Input capacitance Ciss
Output capacitance Coss
Reverse transfer capacitance Crss
Reverse recovery charge Qrr
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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