DIF120SIC035-AQ
SiC MOSFETs

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIF120SIC035-AQ 1200V SiC MOSFET Made in PH
SiC MOSFET, TO-247-4L, N, 72A, 1200V, 35mΩ, 175°C, AEC-Q101
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free Yes

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Technical data

Article number DIF120SIC035-AQ
DIF120SIC035-AQ Single
Type Wire-lead
Package TO-247-4L
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL n/a
 
Polarity pol N
Drain current 25°C ID 72.000 A
Drain current 100°C ID 51.000 A
Drain source voltage VDS 1200 V
On-resistance 1 RDSon1 0.03500
@ ID 40.000 A
@ VGS 20 V
Junction temperature Tjmin
Tjmax 175 °C
Power dissipation Ptot 268.000 W
@ TLoc 25 °C
Location
Peak drain current IDM 160.000 A
Threshold voltage VGSth min 1.8 V
VGSth max 3.0 V
Rise time tr 15 ns
Fall time tf 10 ns
Total switching energy Etotal 0.48 mJ
ESD protection ESD protected No
On-resistance 2 RDSon2
@ ID
@ VGS
Turn-on delay time tD(on) 13 ns
Turn-off delay time tD(off) 40 ns
Total gate charge (4.5V) Qg (4.5V)
Total gate charge (10V) Qg (10V) 106.0 nC
Gate-drain charge Qgd 20 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 2250 pF
Output capacitance Coss 116 pF
Reverse transfer capacitance Crss 7 pF
Reverse recovery charge Qrr 117.0 nC
Avalanche No

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