DIF120SIC028
SiC MOSFETs

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIF120SIC028 1200V SiC MOSFET
SiC MOSFET, TO-247-4L, N, 100A, 1200V, 28mΩ, 175°C
Minimum order quantity 450
Stock 420
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Distributor Availability

Technical data

Article number DIF120SIC028
DIF120SIC028 Single
Type Wire-lead
Package TO-247-4L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
Polarity pol N
Drain current 25°C ID 109.000 A
Drain current 100°C ID 77.000 A
Drain source voltage VDS 1200 V
On-resistance 1 RDSon1 0.02600
@ ID 60.000 A
@ VGS 18 V
Junction temperature Tjmin
Tjmax 175 °C
Power dissipation Ptot 469.000 W
@ TLoc 25 °C
Location
Peak drain current IDM 320.000 A
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Rise time tr 19 ns
Fall time tf 8 ns
Total switching energy Etotal 1.07 mJ
ESD protection ESD protected No
On-resistance 2 RDSon2
@ ID
@ VGS
Turn-on delay time tD(on) 24 ns
Turn-off delay time tD(off) 43 ns
Total gate charge (4.5V) Qg (4.5V)
Total gate charge (10V) Qg (10V) 150.0 nC
Gate-drain charge Qgd 27 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 3450 pF
Output capacitance Coss 114 pF
Reverse transfer capacitance Crss 11 pF
Reverse recovery charge Qrr 193.0 nC
Avalanche No

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample