DIF120SIC022-AQ
SiC MOSFETs

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIF120SIC022-AQ 1200V SiC MOSFET
SiC MOSFET, TO-247-4L, N, 120A, 1200V, 22.3mΩ, 175°C, AEC-Q101
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DIF120SIC022-AQ
DIF120SIC022-AQ Single
Type Wire-lead
Package TO-247-4L
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 120.000 A
Drain Current 100°C ID 85.000 A
Drain Source Voltage VDS 1200 V
On-Resistance 1 RDSon1 0.0223
@ ID 75 A
@ VGS 18 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 340.000 W
@ TLoc
Location
Peak Drain Current IDM 250.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Rise Time tr 38 ns
Fall Time tf 35 ns
Total Switching Energy Etotal 3.70 mJ
ESD protection ESD protected No
On-Resistance 2 RDSon2 0.0280
@ ID 75.000 A
@ VGS 18 V
Turn-On Delay Time tD(on) 150 ns
Turn-Off Delay Time tD(off) 108 ns
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V)
Gate-Drain Charge Qgd 48 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 4817 pF
Output Capacitance Coss 207 pF
Reverse Transfer Capacitance Crss 45 pF
Reverse recovery charge Qrr 630 nC
Avalanche Avalanche No

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