DIF065SIC020
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIF065SIC020 650V SiC MOSFET
SiC MOSFET, TO-247-4L, N, 150A, 650V, 20mΩ, 175°C
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DIF065SIC020
DIF065SIC020 Single
Type Wire-lead
Package TO-247-4L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 150.000 A
Drain Current 100°C ID 100.000 A
Drain Source Voltage VDS 650 V
On-Resistance 1 RDSon1 0.0200 Ω
@ ID 50.000 A
@ VGS 18 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 550.000 W
@ TLoc
Location
Peak Drain Current IDM 300.000 A
Threshold Voltage VGSth min
VGSth max 3.0 V
Rise Time tr 136 ns
Fall Time tf 27 ns
Total Switching Energy Etotal 2.37 mJ
ESD protection ESD protected No
On-Resistance 2 RDSon2
@ ID
@ VGS
Turn-On Delay Time tD(on)
Turn-Off Delay Time tD(off)
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V)
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Reverse recovery charge Qrr
Avalanche Avalanche No

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