DI7A6N04SQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI7A6N04SQ2
MOSFET, SO-8, N+N, 40V, 7.6A, 28mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI7A6N04SQ2
DI7A6N04SQ2 Dual
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N+N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 7.600 A
On-Resistance 1 RDSon1 0.0280 Ω
@ ID 7 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.0320 Ω
@ ID 5.000 A
@ VGS 5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 3.100 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 50.000 A
Threshold Voltage VGSth min 0.8 V
VGSth max 1.6 V
Turn-On Delay Time tD(on) 7 ns
Rise Time tr 43 ns
Turn-Off Delay Time tD(off) 35 ns
Fall Time tf 9 ns
Total Gate Charge (10V) Qg (10V) 18.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 3 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 870 pF
Output Capacitance Coss 100 pF
Reverse Transfer Capacitance Crss 81 pF
Reverse recovery charge Qrr 25 nC

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