DI7A6N04SQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI7A6N04SQ2
MOSFET, SO-8, N+N, 40V, 7.6A, 28mΩ, 150°C
Minimum order quantity 4.000
Stock 16.000
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI7A6N04SQ2
DI7A6N04SQ2 Dual
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+N
Drain source voltage VDS 40 V
Drain current 25°C ID 7.600 A
On-resistance 1 RDSon1 0.0280 Ω
@ ID 7 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.0320 Ω
@ ID 5.000 A
@ VGS 5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 3.100 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 50.000 A
Threshold voltage VGSth min 0.8 V
VGSth max 1.6 V
Turn-on delay time tD(on) 7 ns
Rise time tr 43 ns
Turn-off delay time tD(off) 35 ns
Fall time tf 9 ns
Total gate charge (10V) Qg (10V) 18.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 870 pF
Output capacitance Coss 100 pF
Reverse transfer capacitance Crss 81 pF
Reverse recovery charge Qrr 25 nC

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