DI6A7P02SQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI6A7P02SQ
MOSFET, SO-8, P, 20V, 6.7A, 40mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI6A7P02SQ
DI6A7P02SQ Single
Type SMD
Package SO-8
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS 20 V
Drain current 25°C ID 6.700 A
On-resistance 1 RDSon1 0.0400 Ω
@ ID 3.200 A
@ VGS 5 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.0600 Ω
@ ID -2.700 A
@ VGS -2.7 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 2.500 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 27.000 A
Threshold voltage VGSth min -0.6 V
VGSth max 0.0 V
Turn-on delay time tD(on) 14 ns
Rise time tr 32 ns
Turn-off delay time tD(off) 100 ns
Fall time tf 65 ns
Total gate charge (10V) Qg (10V) 8.5 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 2 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 1500 pF
Output capacitance Coss 730 pF
Reverse transfer capacitance Crss 340 pF
Reverse recovery charge Qrr 71 nC

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