DI5A6C04SQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI5A6C04SQ Complementary MOSFET
MOSFET, SO-8, N+P, 40V, 5.6A, 36mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI5A6C04SQ
DI5A6C04SQ Dual
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+P
Drain source voltage VDS 40 V
Drain current 25°C ID 5.600 A
On-resistance 1 RDSon1 0.0360 Ω
@ ID 5 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.0430 Ω
@ ID 4.000 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 1.950 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 20.000 A
Threshold voltage VGSth min 1.4 V
VGSth max 3.0 V
Turn-on delay time tD(on) 7 ns
Rise time tr 10 ns
Turn-off delay time tD(off) 15 ns
Fall time tf 9 ns
Total gate charge (10V) Qg (10V)
Total gate charge (4.5V) Qg (4.5V) 5.3 nC
Gate-drain charge Qgd 2 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 640 pF
Output capacitance Coss 73 pF
Reverse transfer capacitance Crss 41 pF
Reverse recovery charge Qrr 14 nC

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