DI5A0N60D1
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI5A0N60D1
MOSFET, DPAK, N, 600V, 5A, 0.88Ω, 150°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Downloads & Links

Distributor Availability

Technical data

Article number DI5A0N60D1
DI5A0N60D1 Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 600 V
Drain current 25°C ID 5.000 A
On-resistance 1 RDSon1 0.8800 Ω
@ ID 2.500 A
@ VGS 10 V
Drain current 100°C ID 3.200 A
On-resistance 2 RDSon2
@ ID
@ VGS
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 45.000 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM 12.000 A
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-on delay time tD(on) 16 ns
Rise time tr 15 ns
Turn-off delay time tD(off) 17 ns
Fall time tf 63 ns
Total gate charge (10V) Qg (10V) 10.6 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 5 nC
Single pulse avalanche energy Eas 174.0 mJ
Input capacitance Ciss 307 pF
Output capacitance Coss 26 pF
Reverse transfer capacitance Crss 6 pF
Reverse recovery charge Qrr 1 nC

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample