DI4A0C02PW
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI4A0C02PW
MOSFET, PowerQFN 2x2, N+P, 20V, 6A, 25mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Distributor Availability

Technical data

Article number DI4A0C02PW
DI4A0C02PW Dual Protected
Type SMD
Package PowerQFN 2x2-Dual
Qualification Industrial Grade
Config Dual Protected
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+P
Drain source voltage VDS 20 V
Drain current 25°C ID 6.000 A
On-resistance 1 RDSon1 0.0250
@ ID 5.000 A
@ VGS 4.5 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.0000
@ ID 0.000 A
@ VGS 0 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 2.000 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 20.000 A
@ tp
Threshold voltage VGSth min 0.4 V
VGSth max 1.0 V
Turn-on delay time tD(on) 0 ns
Rise time tr 0 ns
Turn-off delay time tD(off) 0 ns
Fall time tf 0 ns
Total gate charge (10V) Qg (10V)
Total gate charge (4.5V) Qg (4.5V) 0.0 nC
Gate-drain charge Qgd 0 nC
Single pulse avalanche energy Eas 0.0 mJ
Input capacitance Ciss 0 pF
Output capacitance Coss 0 pF
Reverse transfer capacitance Crss 0 pF
Reverse recovery charge Qrr 0 nC
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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