DI465N10LN
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI465N10LN
MOSFET, TOLL, N, 100V, 465A, 1.5mOhm, 175°C
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI465N10LN
DI465N10LN Single
Type SMD
Package LFPAK8X8
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 465.000 A
On-resistance 1 RDSon1 0.00150 Ω
@ ID 25.000 A
@ VGS 10 V
Drain current 100°C ID 0.000 A
On-resistance 2 RDSon2
@ ID
@ VGS
Junction temperature Tjmin
Tjmax 175 °C
Power dissipation Ptot 417.000 W
@ TLoc 25 °C
Location Junction
Avalanche No
Peak drain current IDM 1860.000 A
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-on delay time tD(on) 81 ns
Rise time tr 105 ns
Turn-off delay time tD(off) 171 ns
Fall time tf 118 ns
Total gate charge (10V) Qg (10V) 178.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 44 nC
Single pulse avalanche energy Eas 1500.0 mJ
Input capacitance Ciss 11285 pF
Output capacitance Coss 3363 pF
Reverse transfer capacitance Crss 208 pF
Reverse recovery charge Qrr 791.0 nC

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