DI3A5P06PW-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI3A5P06PW-AQ
MOSFET, PowerQFN 2x2, P, -60V, -3.6A, 106mΩ, 150°C, AEC-Q101
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS
REACH not declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI3A5P06PW-AQ
DI3A5P06PW-AQ Single
Type SMD
Package PowerQFN 2x2
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 1
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -60 V
Drain current 25°C ID -3.500 A
On-resistance 1 RDSon1 0.10600 Ω
@ ID -2.500 A
@ VGS -10 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.13800 Ω
@ ID -2.000 A
@ VGS -4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 1.600 W
@ TLoc 25 °C
Location Junction
Avalanche No
Peak drain current IDM -20.000 A
Threshold voltage VGSth min -1 V
VGSth max -2.5 V
Turn-on delay time tD(on) 9 ns
Rise time tr 15 ns
Turn-off delay time tD(off) 33 ns
Fall time tf 12 ns
Total gate charge (10V) Qg (10V) 18.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 5 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 978 pF
Output capacitance Coss 51 pF
Reverse transfer capacitance Crss 39 pF
Reverse recovery charge Qrr 40.0 nC

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