DI370N10TL
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI370N10TL
MOSFET, TOLL, N, 100V, 370A, 1.68mΩ, 175°C
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI370N10TL
DI370N10TL Single
Type SMD
Package HSOF-8/TOLL
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 370.000 A
On-Resistance 1 RDSon1 0.0017 Ω
@ ID 20.000 A
@ VGS 10 V
Drain Current 100°C ID 262.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 468.800 W
@ TLoc 25 °C
Location
Avalanche Yes
Peak Drain Current IDM 1480.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 87 ns
Rise Time tr 98 ns
Turn-Off Delay Time tD(off) 87 ns
Fall Time tf 98 ns
Total Gate Charge (10V) Qg (10V) 215.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 73 nC
Single pulse avalanche energy Eas 1250.0 mJ
Input Capacitance Ciss 13200 pF
Output Capacitance Coss 2315 pF
Reverse Transfer Capacitance Crss 48 pF
Reverse recovery charge Qrr 235 nC

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