DI370N10TL-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI370N10TL-AQ
MOSFET, TOLL, N, 100V, 375A, 1.4mΩ, 175°C, AEC-Q101
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI370N10TL-AQ
DI370N10TL-AQ Single
Type SMD
Package HSOF-8/TOLL
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 375.000 A
On-resistance 1 RDSon1 0.00140 Ω
@ ID 80.000 A
@ VGS 10 V
Drain current 100°C ID 265.000 A
On-resistance 2 RDSon2
@ ID
@ VGS
Junction temperature Tjmin
Tjmax 175 °C
Power dissipation Ptot 468.800 W
@ TLoc 25 °C
Location
Avalanche Yes
Peak drain current IDM 1502.000 A
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-on delay time tD(on) 21 ns
Rise time tr 31 ns
Turn-off delay time tD(off) 57 ns
Fall time tf 33 ns
Total gate charge (10V) Qg (10V) 130.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 27 nC
Single pulse avalanche energy Eas 821.0 mJ
Input capacitance Ciss 3471 pF
Output capacitance Coss 3226 pF
Reverse transfer capacitance Crss 105 pF
Reverse recovery charge Qrr 162.0 nC

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