DI350N10D2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI350N10D2
MOSFET, D2PAK, N, 100V, 350A, 2mΩ, 175°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI350N10D2
DI350N10D2 Single
Type SMD
Package TO-263AB/D2PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 350.000 A
On-Resistance 1 RDSon1 0.0020 Ω
@ ID 40.000 A
@ VGS 10 V
Drain Current 100°C ID 247.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 250.000 W
@ TLoc 25 °C
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 1398.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 78 ns
Rise Time tr 126 ns
Turn-Off Delay Time tD(off) 85 ns
Fall Time tf 91 ns
Total Gate Charge (10V) Qg (10V) 191.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 56 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Reverse recovery charge Qrr

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