DI1A5N60D1
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI1A5N60D1
MOSFET, DPAK, N, 600V, 1.5A, 8Ω, 150°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI1A5N60D1
DI1A5N60D1 Single Protected
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single Protected
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 600 V
Drain Current 25°C ID 1.500 A
On-Resistance 1 RDSon1 8 Ω
@ ID 0.750 A
@ VGS 10 V
Drain Current 100°C ID 0.970 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 25.000 W
@ TLoc
Location
Avalanche Yes
Peak Drain Current IDM 6.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 3 ns
Rise Time tr 12 ns
Turn-Off Delay Time tD(off) 17 ns
Fall Time tf 7 ns
Total Gate Charge (10V) Qg (10V) 7.9 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 5 nC
Single pulse avalanche energy Eas 30.0 mJ
Input Capacitance Ciss 156 pF
Output Capacitance Coss 24 pF
Reverse Transfer Capacitance Crss 22 pF
Reverse recovery charge Qrr 0 nC

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