DI175N04PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI175N04PQ
MOSFET, PowerQFN 5x6, N, 40V, 175A, 1.25mΩ, 175°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI175N04PQ
DI175N04PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 175.000 A
On-Resistance 1 RDSon1 0.0018 Ω
@ ID 20.000 A
@ VGS 4.5 V
Drain Current 100°C ID 123.700 A
On-Resistance 2 RDSon2 0.0013 Ω
@ ID 20.000 A
@ VGS 10 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 75.000 W
@ TLoc
Location
Avalanche Yes
Peak Drain Current IDM 700.000 A
Threshold Voltage VGSth min 1.3 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 0 ns
Rise Time tr 0 ns
Turn-Off Delay Time tD(off) 0 ns
Fall Time tf 0 ns
Total Gate Charge (10V) Qg (10V) 0.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas 420.4 mJ
Input Capacitance Ciss 9412 pF
Output Capacitance Coss 1792 pF
Reverse Transfer Capacitance Crss 151 pF
Reverse recovery charge Qrr 92 nC

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