DI160N04PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI160N04PQ
MOSFET, PowerQFN 5x6, N, 40V, 160A
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI160N04PQ
DI160N04PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 160.000 A
On-Resistance 1 RDSon1 0.0000 Ω
@ ID 0.000 A
@ VGS 10 V
Drain Current 100°C ID 113.000 A
On-Resistance 2 RDSon2 0.0018 Ω
@ ID 50.000 A
@ VGS 10 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 83.300 W
@ TLoc
Location
Avalanche No
Peak Drain Current IDM 640.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on)
Rise Time tr
Turn-Off Delay Time tD(off)
Fall Time tf
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Reverse recovery charge Qrr

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