DI145N04PQ-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI145N04PQ-Q
MOSFET, PowerQFN 5x6, N, 40V, 145A, 1.5mΩ, 175°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DI145N04PQ-Q
DI145N04PQ-Q Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q compliant
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 145.000 A
On-Resistance 1 RDSon1 0.0015 Ω
@ ID 90 A
@ VGS 10 V
Drain Current 100°C ID 106.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 62.500 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 600.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 49 ns
Rise Time tr 107 ns
Turn-Off Delay Time tD(off) 36 ns
Fall Time tf 33 ns
Total Gate Charge (10V) Qg (10V) 115.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 35 nC
Single pulse avalanche energy Eas 518.0 mJ
Input Capacitance Ciss 7000 pF
Output Capacitance Coss 3070 pF
Reverse Transfer Capacitance Crss 220 pF
Reverse recovery charge Qrr 89 nC

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