DI126N03PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI126N03PQ
MOSFET, PowerQFN 5x6, N, 30V, 126A, 1.9mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI126N03PQ
DI126N03PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 30 V
Drain Current 25°C ID 126.000 A
On-Resistance 1 RDSon1 0.0019 Ω
@ ID 20 A
@ VGS 10 V
Drain Current 100°C ID 79.000 A
On-Resistance 2 RDSon2 0.0029 Ω
@ ID 15.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 52.000 W
@ TLoc 25 °C
Location
Avalanche No
Peak Drain Current IDM 500.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 0 ns
Rise Time tr 0 ns
Turn-Off Delay Time tD(off) 0 ns
Fall Time tf 0 ns
Total Gate Charge (10V) Qg (10V) 0.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 0 nC
Single pulse avalanche energy Eas 0.0 mJ
Input Capacitance Ciss 0 pF
Output Capacitance Coss 0 pF
Reverse Transfer Capacitance Crss 0 pF
Reverse recovery charge Qrr 0 nC

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