DI120SIC081D7
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DI120SIC081D7 1200V SiC MOSFET
SiC MOSFET, TO-263-7L, N, 24A, 1200V, 81mΩ, 175°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI120SIC081D7
DI120SIC081D7 Single
Type SMD
Package TO-263-7L
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
Polarity pol N
Drain current 25°C ID 24.000 A
Drain current 100°C ID 17.000 A
Drain source voltage VDS 1200 V
On-resistance 1 RDSon1 0.0810 Ω
@ ID 12.000 A
@ VGS 18 V
Junction temperature Tjmin
Tjmax 175 °C
Power dissipation Ptot 93.000 W
@ TLoc 25 °C
Location
Peak drain current IDM 52.000 A
Threshold voltage VGSth min 2.8 V
VGSth max 4.8 V
Rise time tr 27 ns
Fall time tf 34 ns
Total switching energy Etotal 0.24 mJ
ESD protection ESD protected No
On-resistance 2 RDSon2
@ ID
@ VGS
Turn-on delay time tD(on)
Turn-off delay time tD(off) 27 ns
Total gate charge (4.5V) Qg (4.5V)
Total gate charge (10V) Qg (10V) 55.0 nC
Gate-drain charge Qgd
Single pulse avalanche energy Eas
Input capacitance Ciss 1550 pF
Output capacitance Coss 56 pF
Reverse transfer capacitance Crss 5 pF
Reverse recovery charge Qrr 245 nC
Avalanche No

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