DI120SIC040TL
SiC MOSFETs

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DI120SIC040TL
SiC MOSFET, TOLL, N, 55AA, 1200V, 40mΩ, 175°C
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI120SIC040TL
DI120SIC040TL Single
Type SMD
Package HSOF-8/TOLL
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
Polarity pol N
Drain current 25°C ID 55.000 A
Drain current 100°C ID 39.000 A
Drain source voltage VDS 1200 V
On-resistance 1 RDSon1 0.04000
@ ID 40.000 A
@ VGS 18 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 176.000 W
@ TLoc 25 °C
Location Junction
Peak drain current IDM 198.000 A
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Rise time tr 15 ns
Fall time tf 10 ns
Total switching energy Etotal 0.29 mJ
ESD protection ESD protected No
On-resistance 2 RDSon2
@ ID
@ VGS
Turn-on delay time tD(on) 10 ns
Turn-off delay time tD(off) 19 ns
Total gate charge (4.5V) Qg (4.5V)
Total gate charge (10V) Qg (10V) 63.0 nC
Gate-drain charge Qgd 21 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 2338 pF
Output capacitance Coss 96 pF
Reverse transfer capacitance Crss 4 pF
Reverse recovery charge Qrr 217.0 nC
Avalanche No

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