DI120SIC019TL
SiC MOSFETs

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DI120SIC019TL
SiC MOSFET, TOLL, N, 90A, 1200V, 19mΩ, 175°C
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI120SIC019TL
DI120SIC019TL Single
Type SMD
Package HSOF-8/TOLL
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
Polarity pol N
Drain current 25°C ID 90.000 A
Drain current 100°C ID 63.000 A
Drain source voltage VDS 1200 V
On-resistance 1 RDSon1 0.01900
@ ID 60.000 A
@ VGS 18 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 300.000 W
@ TLoc 25 °C
Location Junction
Peak drain current IDM 300.000 A
Threshold voltage VGSth min 2.0 V
VGSth max 5.0 V
Rise time tr 30 ns
Fall time tf 19 ns
Total switching energy Etotal 0.39 mJ
ESD protection ESD protected No
On-resistance 2 RDSon2
@ ID
@ VGS
Turn-on delay time tD(on) 19 ns
Turn-off delay time tD(off) 61 ns
Total gate charge (4.5V) Qg (4.5V)
Total gate charge (10V) Qg (10V) 147.0 nC
Gate-drain charge Qgd 29 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 5115 pF
Output capacitance Coss 212 pF
Reverse transfer capacitance Crss 24 pF
Reverse recovery charge Qrr 572.0 nC
Avalanche No

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