DI120N04BPQ-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI120N04BPQ-AQ
MOSFET, PowerQFN 5x6, N, 40V, 120A, 0.022 Ω, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI120N04BPQ-AQ
DI120N04BPQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 120.000 A
On-Resistance 1 RDSon1 0.02200 Ω
@ ID 30.000 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.00000 Ω
@ ID 0.000 A
@ VGS 0 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 83.000 W
@ TLoc 25 °C
Location
Avalanche No
Peak Drain Current IDM 480.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 9 ns
Rise Time tr 3 ns
Turn-Off Delay Time tD(off) 28 ns
Fall Time tf 4 ns
Total Gate Charge (10V) Qg (10V) 43.0 nC
Total Gate Charge (4.5V) Qg (4.5V) 9.0 nC
Gate-Drain Charge Qgd 7 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 2900 pF
Output Capacitance Coss 895 pF
Reverse Transfer Capacitance Crss 45 pF
Reverse recovery charge Qrr 0.0 nC

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